High Speed Electro-Absorption Modulator for Long Range Retroreflective Free Space Optics
نویسندگان
چکیده
منابع مشابه
Free space millimeter wave-coupled electro-optic high speed nonlinear polymer phase modulator with in-plane slotted patch antennas.
We report in-plane slotted patch antenna-coupled electro-optic phase modulators with a carrier-to-sideband ratio (CSR) of 22 dB under an RF power density of 120 W/m(2) and a figure of merit of 2.0 W(-1/2) at the millimeter wave frequencies of 36-37 GHz based on guest-host type of second-order nonlinear polymer SEO125. CSR was improved more than 20 dB by using a SiO(2) protection layer. We demon...
متن کاملHigh performance Ge/SiGe quantum well electro-absorption modulator
A 23 GHz Ge/SiGe multiple quantum well electroabsorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit. Keywords-component; Quantum-confined Stark effect, Ge/SiGe, multiple quantum well modulators
متن کاملDeposited silicon high-speed integrated electro-optic modulator.
We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p(+)n(-)n(+) diode to achieve optical modulatio...
متن کاملFree-space electro-optics sampling of mid-infrared pulses
Despite the rapid advance of terahertz optoelectronics in the recent decade, the frequency region above 10 THz has yet been accessible for coherent detection. Whereas Katzenllenbogen et al. reported a frequency response of 6 THz from their photoconducting dipole antenna ~PDA!, the record was recently pushed to 7 THz with a much broader 3-dB bandwidth in a GaP-based free-space electro-optic samp...
متن کاملBroadband Silicon Electro-Optic Absorption Modulator
Here we propose a design for a broadband electro-optic absorption modulator. The device is simply a 50μm long silicon waveguide with integrated Schottky diodes. It achieves 64% modulation depth up to at least 10 Gb/s. 2008 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (230.2090) Electro-optical devices; (230.4110) Modulators
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Photonics Technology Letters
سال: 2017
ISSN: 1041-1135,1941-0174
DOI: 10.1109/lpt.2017.2680842